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| @vic AV9014 TO-92 Plastic-Encapsulate Transistors AV9014 TRANSISTOR NPN FEATURES Power dissipation PCM : 0.4 WTamb=25 Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : 50 V Operating and storage junction temperature range TJTstg: -55 to +150 TO--92 1. EMITTER 2. BASE 3.COLLECTOR 1 23 ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE VCE(sat) VBE(sat) Test conditions Ic= 100 A IE=0 Ic= 0. 1 mA IB=0 IE= 100 A IC=0 VCB=50 V , IE=0 VCE=35 V , IB=0 VEB= 3 V IC=0 VCE= 5 V, IC= 1mA IC= 100mA, IB= 5 mA IC= 100 mA, IB= 5mA VCE= 5 V, IC= 10mA 60 MIN 50 45 5 0.1 0.1 0.1 1000 0.3 1 V V MAX UNIT V V V A A A Transition frequency fT f =30MHz 150 MHz CLASSIFICATION OF HFE Rank Range A 60-150 B 100-300 C 200-600 D 400-1000 Copyright (c) Avic Electronics Corp. 1 Website: http://www.avictek.com @vic Typical Characteristics 100 90 1000 IB=160A IB=140A IB=120A IB=100A IB=80A IB=60A IB=40A IB=20A AV9014 VCE = 5V IC[mA], Collector Current 80 70 60 50 40 30 20 10 0 0 hFE, DC Current Gain 100 10 10 20 30 40 50 1 10 100 1000 VCE[V], Collector-Emitter Voltage Figure 1. Static Characteristic IC[mA], Collector Current Figure 2. DC current Gain fT[MHz], Current Gain-Bandwidth Product 1000 VBE(sat) 1000 VCE = 5V VBE(sat), VCE(sat)[V], Saturation Voltage 100 VCE(sat) 100 10 1 10 100 IC=10IB 1000 10 1 10 100 1000 IC[mA], Collector Current Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage IC[mA], Collector Current Figure 4. Current Gain Bandwidth Product Copyright (c) Avic Electronics Corp. 2 Website: http://www.avictek.com |
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